1.

Conference Proceedings
Conference Proceedings
1. Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
Winter,S. ; Biasser,S. ; Hofsass,H. ; Jahn,S. ; Lindner,G. ; Recknagel,E.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1221-1226,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
2.

Conference Proceedings
Conference Proceedings
2. Electron-Positron-Channeling and Mossbauer-Effect Studies of Indium-Vacancy Complexes in Ion-Implanted Nickel
Besold,B. ; Danielsen,E. ; Hofsass,H. ; Lindner,G. ; Petersen,J.W. ; Recknagel,E. ; Sondergaard,M. ; Weyer,G. ; Winter,S.
Pub. info.: Vacancies and interstitials in metals and alloys : Proceedings of the International Conference on Vacancies and Interstitials in Metals and Alloys held in Berlin, Germany, September 14-19, 1986.  Pt.2  pp.665-668,  1987.  Aederlmannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 15-18
3.

Conference Proceedings
Conference Proceedings
3. Perturbed angular correlation measurements and lattice site location of Br in GaAs
Wehner,M. ; Risse,M. ; Vianden,R. ; Dalmer,M. ; Hofsass,H. ; Ridgway,M.C. ; Petravic,M. ; Collaboration,the ISOLDE
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.899-904,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
4.

Conference Proceedings
Conference Proceedings
4. Latuce Sites of Ion Implanted Li in Zn-Rich ZnSe
Jahn,S.G. ; Wahl,U. ; Restle,M. ; Quintel,H. ; Hofsass,H. ; Wienecke,M. ; Trojahn,I.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.315-320,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Lattice Sites of Li in Si and Ge
Wahl,U. ; Jahn,S.G. ; Restle,M. ; Quintel,H. ; Hofsass,H.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.115-120,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201