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59 results

Conference Proceedings

1. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE

Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.303-306, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

2. DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON

Awadelkarim, O.O. ; Henry, A. ; Monemar, B. ; Lindstrom, J.L.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.283-286, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

3. Shallow P Donors in 3C-, 4H- and 6H-SiC

Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.593-596, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Photoluminescence of Phosphorus Doped SiC

Henry, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.589-592, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC

Ivanov, I.G. ; Henry, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.601-604, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.461-464, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor

Henry, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.101-104, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. SiC and III-Nitride Growth in Hot-Wall CVD Reactor

Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.61-66, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC

Son, N. T. ; Henry, A. ; Isoya, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.515-518, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures

Chen, W. M. ; Buyanova, I. A. ; Henry, A. ; Ni, W.-X. ; Hansson, G. V. ; Monemar, B.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.135-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

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