1.

Conference Proceedings
Conference Proceedings
1. ATOMIC LAYER EPITAXY OG GaAs ON Si BY MOCVD
Karam, N. H. ; Haven, V. E. ; Vermon,. S. M. ; Tan, J. C. ; El-Masry, N. A.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.331-336,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
2.

Conference Proceedings
Conference Proceedings
2. LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si
Wilson, B. A. ; Bonner, C. E. ; Harris, T. D. ; Lamont, M. G. ; Miller, R. C ; Sputz, S. K. ; Vermon, S. M. ; Haven, V. E. ; Lum,. R. M. ; Klingert, J. K.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.255-260,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERIZATION OF GaAs GROWN BY DIRECT DEPOSITION ON Si
Vernon, S. M. ; Pearton, s. J. ; Gibson, J. M. ; Caruso, R. ; Abernathy, C. R. ; Short, K. T. ; Stavola, M. ; Haven, V. E. ; Jacobson, D. C.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.187-192,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91