1.

Conference Proceedings
Conference Proceedings
1. THE EFFECT OF Co-IMPLANTATION ON THE ELECTRICAL ACTIVITY OF IMPLANTED CARBON IN GaAs
Moll, A. J. ; Walukiewicz, W. ; Yu, K. M. ; Hansen, W. L. ; Haller, E. E.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.811-816,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. LATTICE RELAXATION OF THE DX CENTERS IN Ga1-XAlXAs AND OF THE PRESSURE-INDUCED DEEP DONORS IN GaAs
Li, M. F. ; Shan, W. ; Yu, P. Y. ; Hansen, W. L. ; Weber, E. R. ; Bauser, E.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.573-578,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
3.

Conference Proceedings
Conference Proceedings
3. Germanium Far-IR Blocked Impurity Band Detectors
Olsen, C. S. ; Beeman, J. W. ; Hansen, W. L. ; Haller, E. E.
Pub. info.: Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.215-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 484
4.

Conference Proceedings
Conference Proceedings
4. High Purity Germanium Crystal Growing;
Hansen, W. L. ; Haller, E.. E.
Pub. info.: Nuclear radiation detector materials : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.1-16,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 16