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11 results

Conference Proceedings

1. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane

Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.123-126, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. Cathodoluminescence of Defect Regions in SiC Epi-Films

MacMillan,M.F. ; Hultman,L. ; Hallin,C. ; Ivanov,I.G. ; Henry,A. ; Janzen,E. ; Galloway,S.A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.653-656, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. A deep photoluminescence band in 4H SiC related to the silicon vacancy

Sorman,E. ; Son,N.T. ; Chen,W.M. ; Hallin,C. ; Lindstrom,J.L. ; Janzen,E.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.685-690, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices

Konstantinov,A.O. ; Wahab,Q. ; Hallin,C. ; Harris,C.I. ; Pecz,B.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1025-1028, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Evaluation of Auger Recombination Rate in 4H-SiC

Galeckas,A. ; Linnros,J. ; Grivickas,V. ; Lindefelt,U. ; Hallin,C.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.533-536, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.557-560, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Phaase Formation Sequence of Nickel Silicides from Rapid Thermal Annealing of Ni on 4H-SiC

Madsen,L.D. ; Svedberg,E.B. ; Radamson,H.H. ; Hallin,C. ; Hjorvarsson,B. ; ,C.Cabrai.Jr. ; Jordan-Sweet,J.L. ; Liavoie,C.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.799-804, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. XPS Study of Ni Layers Deposited on 6H-SiC

Marinova,Ts. ; Krastev,V. ; Hallin,C. ; Yakimova,R. ; Janzen,E.

Pub. info.:	Intergranular and interphase boundaries in materials : iib95 : proceedings of the 7th International Conference on Intergranular and Interphase Boundaries in Materials held in Lisboa, Portugal, June 26-29, 1995. pp.293-296, 1996. Zurich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	207-209

Conference Proceedings

9. Ga Bound Excitons in 6H-SiC

Henry,A. ; Hallin,C. ; Ivanov,I.G. ; Bergnan,J.P. ; Kordina,O. ; Monemar,B. ; Janzen,E.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.91-96, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Conference Proceedings

10. Some Aspects of the Photoluminescence and Raman Spectroscopy of(1010)-and(1120)-Oriented 4H and 6H Silicon Carbide

Ivanov,I.G. ; Henry,A. ; Hallin,C. ; Egilsson,T. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.469-472, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Author: Hallin,C.