1.

Conference Proceedings
Conference Proceedings
1. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.441-444,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
Y. Kiuchi ; H. Kitai ; H. Shiomi ; M. Tsujimura ; D. Nakata
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.449-452,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Improved Simulation Models for Designing Novel Edge Termination and Current Spreading Layers for 3300-V-Class 4H-SiC Implantation-Epitaxial MOSFETs with Low On-Resistance and Robustness
H. Shiomi ; T. Tsuji ; N. Ohse ; Y. Onishi ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.966-969,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. 3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability
T. Tsuji ; H. Shiomi ; N. Ohse ; Y. Onishi ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.962-965,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Brittle Crack Propagation/Arrest Behavior in T-Joint Structure of Heavy Gauge Steel Plates
T. Handa ; K. Nishimura ; H. Shiomi ; S. Tsuyama
Pub. info.: THERMEC 2011 : International Conference on Processing & Manufacturing of Advanced Materials : processing, fabrication, properties, applications, August 1-5, 2011, Quebec City, Canada.  pp.914-919,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 706-709
6.

Conference Proceedings
Conference Proceedings
6. Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
M. Nakamura ; Y. Hashino ; T. Furusho ; H. Kinoshita ; H. Shiomi
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.967-970,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
T. Nishiguchi ; T. Furusho ; T. Isshiki ; K. Nishio ; H. Shiomi
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.329-332,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
8.

Conference Proceedings
Conference Proceedings
8. Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
N. Hoshino ; M. Tajima ; T. Hayashi ; T. Nishiguchi ; H. Kinoshita ; H. Shiomi
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.275-278,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
9.

Conference Proceedings
Conference Proceedings
9. Mechanisms and Lubrication of Electrodynamic Tether System for Debris Removal
K. Matsumoto ; H. Shiomi ; S. Kawamoto
Pub. info.: Proceedings of ESMATS 2013 : 15th European Space Mechanisms and Tribology Symposium : 25-27 September 2013, Noordwijk, The Netherlands.  2013.  Noordwijk, The Netherlands.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 718
10.

Conference Proceedings
Conference Proceedings
10. Performance of Electroconductive Bonded Lubricant Films in Space Environment for Electrodynamic Tether of Debris Removal System
K. Matsumoto ; A. Takahashi ; H. Shiomi
Pub. info.: Proceedings of ISMSE-12 : 12th International Symposium on Materials in the Space Environment : 24-28 September 2012, Noordwijk, The Netherlands.  2013.  Noordwijk, The Netherlands.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 705