1.

Conference Proceedings
Conference Proceedings
1. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.441-444,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
Y. Kiuchi ; H. Kitai ; H. Shiomi ; M. Tsujimura ; D. Nakata
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.449-452,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Systematic Investigation of 4H-SiC Trench Properties Dependence on Channel Concentration, Crystallographic Plane, and MOS Interface Treatment
H. Kitai ; T. Hatayama ; H. Tamaso ; S. Kyogoku ; T. Masuda
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.639-642,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three- Zone Junction Termination Extension
H. Kitai ; Y. Hozumi ; H. Shiomi ; M. Furumai ; K. Omote ; K. Fukuda
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.451-454,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. 1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
S. Harada ; Y. Kobayashi ; A. Kinoshita ; N. Ohse ; T. Kojima ; M. Iwaya ; H. Shiomi ; H. Kitai ; S. Kyogoku ; K. Ariyoshi ; Y. Onishi ; H. Kimura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.497-500,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897