1.

Conference Proceedings
Conference Proceedings
1. Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
A. Salemi ; H. Elahipanah ; B. Buono ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.974-977,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges
A. Salemi ; H. Elahipanah ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.834-837,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. 4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension
H. Elahipanah ; A. Salemi ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.838-841,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices
H. Elahipanah ; A. Salemi ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.978-981,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Geometrical Effect Dependency on the On-State Characteristics in 5.6 kV 4H-SiC BJTs
A. Salemi ; H. Elahipanah ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.958-961,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
H. Elahipanah ; A. Salemi ; B. Buono ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.809-812,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
7.

Conference Proceedings
Conference Proceedings
7. 10+ kV Implantation-Free 4H-SiC PiN Diodes
A. Salemi ; H. Elahipanah ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.423-426,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
8.

Conference Proceedings
Conference Proceedings
8. Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
H. Elahipanah ; N. Thierry-Jebali ; S.A. Reshanov ; W. Kaplan ; A. Zhang ; J.K. Lim ; M. Bakowski ; M. Östling ; A. Schöner
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.455-458,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897