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16 results

Conference Proceedings

1. Generation of anion-antisite defects in n-type,p-type and semi-insulating InP studied by MCD-ODMR and MCD-ODENDOR

Gislason,H.P. ; Sun,H. ; Peale,R.E. ; Watkins,G.D.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.905-910, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

2. Electronic Properties of GaAs Doped with Copper

Yang,B.H. ; Gislason,H.P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.713-718, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

3. Lithium-Gold-Related Photoluminescence in n-Type Silicon

Gislason,H.P. ; Kristjansson,S. ; Sveinbjornsson,E.O.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.695-700, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

4. Characterization of an Anion Antisite Defect as a Deep Double Donor in InP

Ando,K. ; Katsui,A. ; Jeon,D.Y. ; Watkins,G.D. ; Gislason,H.P.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.761-768, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

5. Lithium induced vacancy formation and its effect on the diffusivity of lithium in gallium arsenide.(Invited)

Gislason,H.P. ; Leosson,K. ; Svavarsson,H. ; Saarinen,K. ; Mari,A.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1813-1820, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. Low temperature intrinsic diffusion coefficient of lithium in GaAs

Leosson,K. ; Gislason,H.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1827-1832, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Electrical and optical properties of GaAs doped with Li

Gislason,H.P. ; Yang,B. ; Hauksson,I.S. ; Gudmundsson,J.T. ; Linnarsson,M. ; Janzen,E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.985-990, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

8. Characterization of Defects in Li-Diffused n-type GaAs

Yang,B.H. ; Egilsson,T. ; Kritjansson,S. ; Peiursson,J. ; Gislason,H.P.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.839-843, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Time-of-Flight in Lithiwn-Compensated GaAs

Ingvarsson,S.P. ; Gislason,H.P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1655-1660, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Conference Proceedings

10. Effects of copper diffusion on the native defect EL2 in GaAs

Seghier,D. ; Gislason,H.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1003-1008, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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Author: Gislason,H.P.