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Conference Proceedings

1. AlGaN-based structures on sapphire for visible-blind Schottky-barrier UV photodetectors:toward high-performance device applications

Omnes,F. ; Monroy,E. ; Beaumont,B. ; Calle,F. ; Munoz,E. ; Gibart,P.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.234-249, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

2. Metal organic vapor phase epitaxy of GaN and lateral overgrowth

Beaumont,B. ; Gibart,P.

Pub. info.:	Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.2-13, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3725

Conference Proceedings

3. Correlation between the optically detected magnetic resonance and the photoconductivity of photo-ionized DX centers in Sn-doped AlxGal-xAs

Fockele,M. ; Spaeth,J.-M. ; Overhof,H. ; Gibart,P.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.835-840, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. The Sn- and Si-DX Centre Properties in Double Doped(Al,Ga)As

Maude,D.K. ; Willke,U. ; Fille,M.L. ; Gibart,P. ; Portal,J.C.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.441-446, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

5. Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3

Allegre,J. ; Lefebvre,P. ; Camassel,J. ; Beaumont,B. ; Gibart,P.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1279-1282, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-XAs from Transport Experiments under Hydrostatic Pressure

Azema,S. ; Mosser,V. ; Camassel,J. ; Piotrakowski,R. ; Robert,J.L. ; Gibart,P. ; Contour,J.P. ; Massie,J. ; Marty,A.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.857-862, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

7. Blue-U.V.Homojunction GaN LEDs Fabricated by MOVPE

Beaumont,B. ; Calle,F. ; Haffouz,S. ; Monroy,E. ; Leroux,M. ; Calleja,E. ; Lorenzini,P. ; Mufioz,E. ; Gibart,P.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1425-1428, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Blue emission in Mg doped CaN studied by time-resolved spectroscopy

Seitz,R. ; Gaspar,C. ; Monteiro,T. ; Pereira,E. ; Leroux,M. ; Beaumont,B. ; Gibart,P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1155-1160, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Local Structure of the DX Center in AlGaAs:Results from Positron Spectroscopy

Laine,T. ; Makinen,J. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Gibart,P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1073-1078, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Conference Proceedings

10. AlGaN-based photodetectors for solar UV applications

Munoz,E. ; Monroy,E. ; Calle,F. ; Sanchez,M.A. ; Calleja,E. ; Omnes,F. ; Gibart,P. ; Jaque,F. ; Carcer,I.Aguirre de

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.200-210, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

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