1.

Conference Proceedings
Conference Proceedings
1. RTP Process to Reduce NMOS to PMOS Isolation Step height Delta
Khoueir, A. ; Khoury, M. ; Zagrehelny, A. ; Sen, I. ; Fulford, J. ; Amzen, D.
Pub. info.: Chemical Mechanical Planarization : proceedings of the International Symposium.  pp.273-282,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-21
2.

Conference Proceedings
Conference Proceedings
2. RPT N20 Oxides For Non-Volatile Memory Applications
Gardner, M. ; Fulford, J. ; Bhat, M. ; Kwong, D.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.357-362,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
3.

Conference Proceedings
Conference Proceedings
3. The Role Silicon Surface Roughness Has Upon Producing Highly Reliable Tunnel/Gate Dielectric's
Gardner, M. ; Seaton, J. ; Fulford, J.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.180-184,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
4.

Conference Proceedings
Conference Proceedings
4. Recent Developments in Ultratlsin Nitride Gate Stack Prepared by In-Situ RTP Multiprocessing for CMOS ULSI
Song, S.C. ; Kini, B.Y. ; Loan, H.F. ; Kwong, D.-L. ; Gardner, M. ; Fulford, J. ; Wristers, D. ; Gelpey, J. ; Marcus, S.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.45-56,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
5.

Conference Proceedings
Conference Proceedings
5. Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection
Chen, Y. Y. ; Gardner, M. ; Fulford, J. ; Wristers, D. ; Joshi, A. B. ; Kwong, D. L.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.283-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
6.

Conference Proceedings
Conference Proceedings
6. Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
Song, S. C. ; Lee, C. H. ; Luan, H. F. ; Kwong, D. L. ; Gardner, M. ; Fulford, J. ; Allen, M. ; Bloom, J. ; Evans, R.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.65-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
7.

Conference Proceedings
Conference Proceedings
7. High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process
Song, S. C. ; Luan, H. F. ; Gardner, M. ; Fulford, J. ; Allen, M. ; Kwong, D. L.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.83-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
8.

Conference Proceedings
Conference Proceedings
8. Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation
Wristers, D. ; Wang, H.H. ; Han, L.K. ; Lin, C. ; Chen, T.S. ; Kwong, D.L. ; Fulford, J.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.733-743,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
9.

Conference Proceedings
Conference Proceedings
9. Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides
Kim, B.Y. ; Han, L.K. ; Wristers, D. ; Fulford, J. ; Kwong, D.-L.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.722-732,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1