1.

Conference Proceedings
Conference Proceedings
1. The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
Weyer,G. ; Kringhaj,P. ; Freitag,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.271-276,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. The Chemical Identification of Defect Impurities Using Radioactive Isotopes
Daly,S.E. ; Henry,M.O. ; Frehill,C.A. ; Freitag,K. ; Vianden,R. ; Rohrlack,G. ; Forkel,D.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1497-1502,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Evidence for High Vacancy Concentrations in Heavily Doped n-Type Silicon from Mossbauer Experiments
Weyer,G. ; Fanciulli,M. ; Freitag,K. ; Larsen,A.Nylandsted ; Lindroos,M. ; Muller,E. ; Vestergaard,H.C.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1117-1122,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Hall Effect Measurements on Transmutation Doped Semiconductors
Rohrlack,G. ; Freitag,K. ; Nathusius,Ch.von ; Vianden,R. ; Gwilliam,R. ; Sealy,B.J.
Pub. info.: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.119-124,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 248-249