1.

Conference Proceedings
Conference Proceedings
1. Study on Chemical-Mechanical Polishing of Low Dielectric Constant Polyimide Thin Films
Tai, Y.L. ; Tsai, M.S. ; Tung, I.C. ; Dai, B.T. ; Feng, M.S.
Pub. info.: Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues, proceedings of the fourth International Symposium and Thin Film Materials for Advanced Packaging Technologies : proceedings of the second International Symposium.  pp.15-23,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-7
2.

Conference Proceedings
Conference Proceedings
2. Modified Double-Layer PECVD Passivation Films for Improving Nonvolatile Memory IC Per-formance
Lin, C.F. ; Tseng, W.T. ; Feng, M.S. ; Chang, Y.F.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.153-163,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
3.

Conference Proceedings
Conference Proceedings
3. HYDROGENATION OF GaAs AND APPLICATION TO DEVICE PROCESSING
Pan, N. ; Feng, M.S. ; Jackson, G.S. ; Bose, S.S. ; Guido, L.J. ; Holonyak, Jr., N. ; Stillman, G.E.
Pub. info.: Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.257-264,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 126
4.

Conference Proceedings
Conference Proceedings
4. EFFECT OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL STRAIN AND DEFECT DISTRIBUTION OF MOCVD GROWN GaAs ON SI
Hsieh, K.C. ; Feng, M.S. ; Stillman, G.E. ; Ito, C.R. ; McIntyre, D.G. ; Kaliski, R.W. ; Feng, M.
Pub. info.: Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A..  pp.261-266,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 116
5.

Conference Proceedings
Conference Proceedings
5. ULSI Multi-Layers Thin Film Passivation Processes for Improving Cache Memory Performance
Lin, C.F. ; Tseng, W.T. ; Feng, M.S. ; Chang, Y.F. ; Hsie, J.J.
Pub. info.: Proceedings of the Symposium on Interconnect and Contact Metallization.  pp.152-164,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-31
6.

Conference Proceedings
Conference Proceedings
6. AIGaN/GaN HEMT sub-bands Study Using Low-Temperature Photoluminescence
Fang, C.Y. ; Lin, C.F. ; Chang, E.Y. ; Feng, M.S.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.96-102,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
7.

Conference Proceedings
Conference Proceedings
7. AIGaN Schottky Characteristics After Hybrid Photoenhanced Wet and Inductively Coupled Plasma Etching
Huang, W.J. ; Joey Fang, C.V. ; Wong, J.S. ; Chang, E.Y. ; Feng, M.S.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.124-128,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
8.

Conference Proceedings
Conference Proceedings
8. Growth And Characterization of GaN/InGaN by Low Pressure Metalorganic Chemical Vapor Deposition
Feng, M.S. ; Guo, J.D. ; Chi, G.C.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.43-49,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21