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20 results

Conference Proceedings

1. Mobility spectrum techniques for characterizing multilayer semiconductors structures

Musca, C.A. ; Nguyen, T. ; Antoszewski, J. ; Redfern, D.A. ; Dell, J.M. ; Faraone, L.

Pub. info.:	Design, characterization, and packaging for MEMS and microelectronics II : 17-19 December, 2001, Adelaide, Australia. pp.314-321, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4593

Conference Proceedings

2. 60Co gamma-irradiation-induced defects in MOCVD η-GaN

Umana-Membreno, G.A. ; Dell, J.M. ; Parish, G. ; Faraone, L. ; Mishra, U.K.

Pub. info.:	Design, characterization, and packaging for MEMS and microelectronics II : 17-19 December, 2001, Adelaide, Australia. pp.220-227, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4593

Conference Proceedings

3. Chemical structure of low-temperature plasma-deposited silicon nitride thin films

Soh, M.T. ; Savvides, N. ; Musca, C.A. ; Dell, J.M. ; Faraone, L.

Pub. info.:	Device and process technologies for MEMS, microelectronics, and photonics III : 10-12 December 2003, Perth, Australia. pp.434-441, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5276

Conference Proceedings

4. Determination of residual stress in low-temperature PECVD silicon nitride thin films

Martyniuk, M.P. ; Antoszewski, J. ; Musca, C.A. ; Dell, J.M. ; Faraone, L.

Pub. info.:	Device and process technologies for MEMS, microelectronics, and photonics III : 10-12 December 2003, Perth, Australia. pp.451-462, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5276

Conference Proceedings

5. Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures

Sewell, R. ; Dell, J.M. ; Musca, C.A. ; Faraone, L.

Pub. info.:	Materials for infrared detectors II : 8-9 July 2002 ,Seattle, Washington, USA. pp.62-69, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4795

Conference Proceedings

6. HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching

Nguyen, T.T. ; Dell, J.M. ; Musca, C.A. ; Antoszewski, J. ; Faraone, L.

Pub. info.:	Materials for infrared detectors II : 8-9 July 2002 ,Seattle, Washington, USA. pp.146-153, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4795

Conference Proceedings

7. Reactive Ion Etching (RIE)-Induced p- to n-Type Conversion in Extrinsically-Doped p-Type HgCdTe

Musca, C. A. ; Smith, E. P. G. ; Siliquini, J. F. ; Dell, J. M. ; Antoszewski, J. ; Piotrowski, J. ; Faraone, L.

Pub. info.:	Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.353-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	484

Conference Proceedings

8. Demonstration of Improved Quantitative Mobility Spectrum Analysis (i-QMSA)

Vurgaftman, I. ; Meyer, J. R. ; Hoffman, C. A. ; Redfern, D. ; Antoszewski, J. ; Faraone, L. ; Lindemuth, J. R.

Pub. info.:	Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.. pp.245-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	490

Conference Proceedings

9. Reactive Ion Etching (RIE)-Induced p- to n-Type Conversion in Extrinsically-Doped p-Type HgCdTe

Musca, C. A. ; Smith, E. P. G. ; Siliquini, J. F. ; Dell, J. M. ; Antoszewski, J. ; Piotrowski, J. ; Faraone, L.

Pub. info.:	Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.631-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	487

10.

Conference Proceedings

10. Determination of mechanical properties of silicon nitride thin films using nanoindentation

Martyniuk, M. ; Antoszewski, J. ; Walmsley, B. A. ; Musca, C. A. ; Dell, J. M. ; Jung, Y.　-G. ; Lawn, B. R. ; Huang, H. ; Faraone, L.

Pub. info.:	Spaceborne sensors II : 28-29 March 2005, Orlando, Florida, USA. pp.216-225, 2005. Bellingham, Wash., USA. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5798

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