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Conference Proceedings

1. Native Paranragnetic Defects in Diamond Films

Fanciulli,M. ; Moustakas,T.D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.35-40, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Evidence for High Vacancy Concentrations in Heavily Doped n-Type Silicon from Mossbauer Experiments

Weyer,G. ; Fanciulli,M. ; Freitag,K. ; Larsen,A.Nylandsted ; Lindroos,M. ; Muller,E. ; Vestergaard,H.C.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1117-1122, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

3. Mossbauer spectroscopy of Fe in silicon with the novel Iaser-ionized 57Mn+ ion beam at ISOLDE

Weyer,G. ; Degroote,S. ; Fanciulli,M. ; Fedoseyev,V.N. ; Langouch,G. ; Mishin,V.I. ; Bavel,A.-M.Van ; Vantomme,A. ; Collaboration,the ISOLDE

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.437-442, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. ll9Sn Mossbauer Study of Ion Implanted GaN

Fanciulli,M. ; Lindroos,M. ; Weyer,G. ; Moustakas,T.D.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.61-66, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201