1.

Conference Proceedings
Conference Proceedings
1. Deep reactive ion etchning of silica for planar lightwave circuits using indigenously developed ECR/RIE system
Pachauri,J.P. ; Baby,A. ; Chaturvedi,N. ; Kothari,H.S. ; Singh,A. ; Singh,B.R. ; Dixit,P.N. ; Bhattacharya,R.
Pub. info.: Photonics 2000 : International Conference on Fiber Optics and Photonics : 18-20 December 2000, Calcutta, India : proceedings.  pp.267-270,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4417
2.

Conference Proceedings
Conference Proceedings
2. An Account of Amorphous Silicon Based Photonic Devices Development Work at N.P.L.
Dixit,P.N. ; Anandan,C. ; Bawa,S.S. ; Mukerjee,C. ; Tanay Seth ; Qureshi,S. ; Bhattacharyya,R.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.624-627,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
3.

Conference Proceedings
Conference Proceedings
3. Capacitance-Voltage Characteristics of Metal-Diamond Like Carbon-Silicon Structures
Sharma,Rajnish ; Kumar,Sushil ; Rauthan,C.M.S. ; Kumar,Sudheer ; Prasad,B. ; Dixit,P.N. ; George,P.J. ; Bhattacharyya,R.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.1444-1447,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975
4.

Conference Proceedings
Conference Proceedings
4. Determination of Surface States in Hydrogenated Amorphous Silicon
Sinha,A.K. ; Dixit,P.N. ; Bhattacharya,R. ; Agarwal,S.C.
Pub. info.: Semiconductor Devices.  pp.611-613,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
5.

Conference Proceedings
Conference Proceedings
5. Comparative Study of Hydrogenated Amorphous Carbon(a-C:H)Films Grown by PECVD Technique Using 13.56MHz and 100MHz Frequencies
Kumar,Sushil ; Dixit,P.N. ; Sarangi,D. ; Bhattacharyya,R.
Pub. info.: Semiconductor Devices.  pp.433-435,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
6.

Conference Proceedings
Conference Proceedings
6. Analysis of Dielectric Constants to Determine sp3/sp2 Ratio in Hydrogenated Amorphous Carbon Films
Verma,B.S. ; Basu,A. ; Panwar,O.S. ; Dixit,P.N. ; Sarangi,D. ; Kar,M. ; Bhattacharyya,R.
Pub. info.: Semiconductor Devices.  pp.430-432,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
7.

Conference Proceedings
Conference Proceedings
7. Hydrogen Evolution and Surface Morphology of Unannealed and Annealed Hydrogenated Amorphous Silicon Films Deposited in an Asymmetric PECVD System at Room Temperature
Panwar,O.S. ; Mukherjee,C. ; Seth,Tanay ; Dixit,P.N. ; Bhattacharyya,R.
Pub. info.: Semiconductor Devices.  pp.617-619,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
8.

Conference Proceedings
Conference Proceedings
8. Electronic Properties of Nitrogen Diluted Hydrogenated Amorphous Carbon Films
Sushil Kumar ; Dixit,P.N. ; Sarangi,D. ; Bhattacharyya,R.
Pub. info.: Physics of - Semiconductor Devices -.  Part 2  pp.1200-1203,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316