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10 results

Conference Proceedings

1. Impact of High-k Properties on MOSFET Electrical Characteristics

Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.

Pub. info.:	Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices. pp.97-109, 2006. Dordrecht. Springer
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	220

Conference Proceedings

2. INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY

Degraeve, R. ; Kaczer, B. ; Roussel, Ph. ; Groeseneken, G.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.475-488, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

3. On the Breakdown Statistics and Mechanisms in Ultra-Thin Oxides and Nitrided Oxides

Groeseneken, G. ; Degraeve, R. ; De Blauwe, J. ; Roussel, P. ; Depas, M. ; Maes, H.

Pub. info.:	Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.3-19, 1997. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-10

Conference Proceedings

4. Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability

Groeseneken, G. ; Kaczer, B. ; Degraeve, R.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.173-198, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

5. Measurement technique, oxide thickness and area dependence of soft-breakdown

Nigam, T. ; Degraeve, R. ; Groeseneken, G. ; Heyns, M. ; Maes, H. E.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.337-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

Conference Proceedings

6. *Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides

Groeseneken, G. ; Degraeve, R. ; Kaczer, B. ; Maes, H. E.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.295-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

Conference Proceedings

7. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)

Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.

Pub. info.:	Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France. pp.144-158, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-10

Conference Proceedings

8. Present Reliability Issues in Ultrathin Oxynitride Films

Kaczer, B ; Degraeve, R. ; Arkhipov, V. ; Groeseneken, G.

Pub. info.:	Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium. pp.307-326, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-01

Conference Proceedings

9. (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line (Invited)

De Jaeger, M. Meuris B. ; Kubicek, S. ; Verheyena, P. ; Van Steenbergen, J. ; Lujan, G. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Van Elshocht, S. ; Delabie, A. ; Lindsay, R. ; Satta, A. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Richard, O.

Pub. info.:	SiGe: materials, processing, and devices : proceedings of the First international symposium. pp.693-700, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-07

10.

Conference Proceedings

10. INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY

Degraeve, R. ; Kaczer, B. ; Roussel, Ph. ; Groeseneken, G.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.475-488, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

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Author: Degraeve, R.