1.

Conference Proceedings
Conference Proceedings
1. Reliability of Nitrided Oxides in N- and P-Type 4H-SiC MOS Structures
Krishnaswami, Sumi ; Das, Mrinal K. ; Agarwal, Anant K. ; Palmour, John W.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.205-210,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
2.

Conference Proceedings
Conference Proceedings
2. Design and Process Issues for Silicon Carbide Power DiMOSFETS
Ryu, Sei-Hyung ; Agarwal, Anant K. ; Saks, Nelson S. ; Das, Mrinal K. ; Lipkin, Lori A. ; Singh, Ranbir ; Palmour, John W.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
3.

Conference Proceedings
Conference Proceedings
3. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC
Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, Mrinal K. ; Lipkin, L.A. ; Palmour, J.W. ; Saks, N. ; Williams, J.R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1195-1198,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393