1.

Conference Proceedings
Conference Proceedings
1. A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
Dahlquist, F. ; Lendenmann, H. ; Ostling, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1129-1132,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. A High Performance JBS Rectifier - Design Considerations
Dahlquist, F. ; Lendenmann, H. ; Oestling, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.683-686,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Lendenmann, H. ; Dahlquist, F. ; Johansson, N. ; Soederholm, R. ; Nilsson, P.A. ; Bergman, J.P. ; Skytt, P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.727-730,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. A 2.8 kV, 2 V Forward Drop JBS Diode with Low Leakage
Dahlquist, F. ; Svedberg, J. -O. ; Zetterling, C. -M. ; Ostling, M. ; Breitholtz, B. ; Lendenmann, H.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1179-1182,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC
Lendenmann, H. ; Bergman, J.P. ; Dahlquist, F. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.901-906,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
Treu, M. ; Rupp, R. ; Brunner, H. ; Dahlquist, F. ; Hecht, Ch.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.981-984,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
Dahlquist, F. ; Lendenmann, H. ; OEstling, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1129-1132,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
Lendenmann, H. ; Dahlquist, F. ; Bergman, J.P. ; Bleichner, H. ; Hallin, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1259-1264,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393