1.

Conference Proceedings
Conference Proceedings
1. Plasma Nitridation of HfO2 Gate Dielectric on p-GaAs Substrates
G.K. Dalapati ; A. Sridhara ; A.S. Wong ; C. Chia ; D. Chi
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.387-392,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Interface Layers for High-k/Ge Gate Stacks: Are They Necessary?
P. McIntyre ; D. Chi ; C. Chui ; H. Kim ; K. Seo
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.519-530,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Structure and Optical Properties of ZnO/NiSi/Si System
W. Ren ; H. Gong ; D. Chi
Pub. info.: State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications.  pp.177-182,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(3)
4.

Conference Proceedings
Conference Proceedings
4. Enhanced Ferromagnetic Fe-rich Germanide Film Grown using Magnetron Sputtering Employing a Post-deposition Anneal
A. Wong ; G. Ho ; D. Chi
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.989-997,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts
C.D. Tan ; C. Chua ; D. Chi
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.281-286,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
6.

Conference Proceedings
Conference Proceedings
6. Full Range Work Function Tuning of MOSFETs using Interfacial Yttrium Layer in fully Germanided Ni Gate
H. Yu ; K. Fey ; W. Choi ; D. A. Antoniadis ; G. A. Fitzgerald ; M. Dawood ; K. Ow ; D. Chi
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.271-278,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)