1.

Conference Proceedings
Conference Proceedings
1. Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring
Okumura, H. ; Balakrishnan, K. ; Feuillet, G. ; Ohta, K. ; Hamaguchi, H. ; Chichibu, S. ; Ishida, Y. ; Yoshida, S.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.435-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Valence Band Physics in Wurtzite GaN
Azuhata, T. ; Sota, T. ; Chichibu, S. ; Kuramata, A. ; Horino, K. ; Yamaguchi, M. ; Yagi, T. ; Nakamura, S.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.445-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
3.

Conference Proceedings
Conference Proceedings
3. Localized Excitons in InGaN
Chichibu, S. ; Deguchi, T. ; Sota, T. ; Wada, K. ; Nakamura, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.613-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Recombination of Localized Excitons in InGaN Single- and Multiquantum-Well Structures
Chichibu, S. ; Azuhata, T. ; Sota, T. ; Nakamura, S.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.653-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449