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13 results

Conference Proceedings

1. Investigation of Defect Activation under Thermal Anneal in ECR H-Plasma Exposed Si

Chi, D.Z. ; Ashok, S. ; Theodore, D.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.162-168, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

2. Effect of V/III ratio on extended defects in InGaAIP measured by isothermal DLTS

Lim, H.F. ; Chua, S.J. ; Dong, J.R. ; Chi, D.Z. ; Soh, C.B.

Pub. info.:	Photonics technology in the 21st century : 27-29 November 2001, Singapore /John H. Marsh, Pallab Bhattacharya, Osamu Wada, chairs/editors ; sponsored by SPIE--the International Society for Optical Engineering, Nanyang Technological University(Singapore). pp.125-132, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4598

Conference Proceedings

3. Identification of deep levels in π-GaN epilayers

Soh, C.B. ; Chi, D.Z. ; Lim, H.F. ; Chua, S.J.

Pub. info.:	Design, fabrication, and characterization of photonic devices : 27-30 November 2001, Singapore. pp.211-220, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4594

Conference Proceedings

4. Comparative Study Of Trap Levels Observed In Undoped And Si-Doped GaN

Soh, C.B. ; Chi, D.Z. ; Lim, H.F. ; Chua, S.J.

Pub. info.:	Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.415-420, 2002. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	719

Conference Proceedings

5. Formation and Morphology Evolution of Nickel Germanides on Ge (100) Under Rapid Thermal Annealing

Lee, K.Y. ; Liew, S.L. ; Chua, S.J. ; Chi, D.Z. ; Sun, H.P. ; Pan, X.Q.

Pub. info.:	Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.55-60, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	810

Conference Proceedings

6. Suppression Of Nisi-To-Nisi_2 Transition Using Very Short-Time Rta Silicidation

Ma, D. ; Chi, D.Z. ; Wang, W.D. ; Wong, A.S.W. ; Chua, S.J.

Pub. info.:	Silicon materials - processing characterization and reliability : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.47-52, 2002. Warrendale. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	716

Conference Proceedings

7. Probing Effects of Etching Plasmas on the Properties of Porous Low-k Dielectrics

Wang, L. ; Liu, J. ; Wang, W.D. ; Chi, D.Z. ; Gidley, D.W. ; Yee, A.F.

Pub. info.:	Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.91-96, 2004. Warrendale. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	812

Conference Proceedings

8. Study of Ge Out-Diffusion During Nickel (Platinum 〜 0, 5, 10 at.%) Germanosilicide Formation

Jin, L.J. ; Pey, K.L. ; Choi, W.K. ; Fitzgerald, E.A. ; Antoniadis, D.A. ; Pitera, A.J. ; Lee, M.L. ; Chi, D.Z.

Pub. info.:	Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.141-146, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	810

Conference Proceedings

9. Effect of Ge-Rich Si1-zGez Segregation on the Morphological Stability of NiSi1-uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

Yao, H.B. ; Chi, D.Z. ; Tripathy, S. ; Chow, S.Y. ; Wang, W.D. ; Chua, S.J. ; Sun, H.P. ; Pan, X.Q.

Pub. info.:	Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.165-170, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	810

10.

Conference Proceedings

10. Influence of Atomic Hydrogen on Nickel Silicide Formation

Vengurlekar, A. ; Balasubramanian, Satheesh ; Ashok, S. ; Theodore, N.D. ; Chi, D.Z.

Pub. info.:	Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.159-164, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	810

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Author: Chi, D.Z.