1.

Conference Proceedings
Conference Proceedings
1. Highly Selective Etch Process for the Manufacture of GaAs Power MESFETs
Chang, E.Y. ; Loi, Y.-L. ; Lee, Y.S.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.40-46,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
2.

Conference Proceedings
Conference Proceedings
2. Backside Copper Metallization of GaAs MESFET's Using Ta or TaN As The Diffusion Barrier
Chang, E.Y. ; Chen, C.Y. ; Chang, L. ; Chen, S.H
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.282-291,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
3.

Conference Proceedings
Conference Proceedings
3. 2.4-V Operated Enhancement-Mode Pseudomorphic HEMT's for Wireless Communications
Chang, E.Y. ; Chen, S.H. ; Wang, S.P.
Pub. info.: III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia.  pp.305-310,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-1
4.

Conference Proceedings
Conference Proceedings
4. An Etch Back Technique to Achieve Sub-Micron T-Gate for GaAs FETs Using 1-Line Stepper and Phase Shift Mask (PSM)
Fu, D.K. ; Chen, S.H. ; Chang, H.C. ; Chang, E.Y.
Pub. info.: Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001).  VOL-2  pp.1437-1439,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4746
5.

Conference Proceedings
Conference Proceedings
5. AIGaN/GaN HEMT sub-bands Study Using Low-Temperature Photoluminescence
Fang, C.Y. ; Lin, C.F. ; Chang, E.Y. ; Feng, M.S.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.96-102,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
6.

Conference Proceedings
Conference Proceedings
6. Multi-Energy Oxygen Ion Implantation for AlGaN/GaN HEMTs
Shiu, J.Y. ; Shoau, Y.S. ; Huang, J.-C ; Hsieh, Y.-C. ; Chang, C.-T. ; Lu, C.-Y. ; Chang, E.Y.
Pub. info.: State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia.  pp.296-300,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-04
7.

Conference Proceedings
Conference Proceedings
7. A High Power Enhancement- Mode Pseudomorphic High Electron Mobility Transistor With 2.5w Output Power and 64.5% Efficiency at 3V
Chen, S.H. ; Chang, E.Y. ; Lin, Y.C.
Pub. info.: Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001).  VOL-1  pp.397-399,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4746
8.

Conference Proceedings
Conference Proceedings
8. AIGaN Schottky Characteristics After Hybrid Photoenhanced Wet and Inductively Coupled Plasma Etching
Huang, W.J. ; Joey Fang, C.V. ; Wong, J.S. ; Chang, E.Y. ; Feng, M.S.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.124-128,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
9.

Conference Proceedings
Conference Proceedings
9. A novel I-line Phase Shift Mask (PSM) Technique for Submicron T-Gate formation
Fu, D.K. ; Chang, H.C. ; Chang, E.Y.
Pub. info.: State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium.  pp.146-153,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-20
10.

Conference Proceedings
Conference Proceedings
10. A Study of Boron Diffusion from Selectively Grown Epitaxial Silicon-Germanium into Silicon During Rapid Thermal Annealing
Yang, T.H. ; Chang, E.Y. ; Chen, K.M. ; Chien, C.H. ; Huang, H.J. ; Yang, T.Y. ; Chang, C.Y.
Pub. info.: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.371-380,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-11