1.

Conference Proceedings
Conference Proceedings
1. Growth of High Quality GaAs Epitaxial Layers on Si Substrate by using Novel GeSi Buffer Structure
Chang, E. Y. ; Luo, G. ; Yang, T. H.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.95-99,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
2.

Conference Proceedings
Conference Proceedings
2. THE SELECTIVITY OF REACTIVE ION ETCH OF Ga0.51In0.49P/GaAS
Wu, J. W. ; Chan, S. H. ; Lin, K. C. ; Chang, C. Y. ; Chang, E. Y.
Pub. info.: Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A..  pp.755-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 337
3.

Conference Proceedings
Conference Proceedings
3. REACTIVE ION ETCH OF GaAs AND AlGaAs USING BCl3, SiCl4 AND SF6 INSTEAD OF CCl2F2
Wu, J. W. ; Chang, C. Y. ; Lin, K. C. ; Chang, E. Y. ; Hwang, J. H.
Pub. info.: Materials and processes for environmental protection : symposium held April 5-7, 1994, San Francisco, California, U.S.A..  pp.295-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 344
4.

Conference Proceedings
Conference Proceedings
4. An AlGaN/GaN HEMT with WNx T-Gate for High Temperature Application
Huang, Y. L. ; Fang, C. V. ; Chang, E. Y. ; Lee, C. S. ; Chen, S. H. ; Lee, H. M. ; Lien, Y. C. ; Lee, C. T.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.131-138,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14