1.

Conference Proceedings
Conference Proceedings
1. 1836 V, 4.7 mΩ・cm2 High Power 4H-SiC Bipolar Junction Transistor
Zhang, J.H. ; Wu, J. ; Alexandrov, P. ; Burke, T. ; Sheng, K. ; Zhao, J.H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1417-1420,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. AN OPTICALLY GATED InP BASED THYRISTOR FOR HIGH POWER PULSED SWITCHING APPLICATIONS
Zhao, J. H. ; Lis, R. ; Coblentz, D. ; Illan, J. ; McAfee, S. ; Burke, T. ; Weiner, M. ; Buhwald, W. ; Jones, K.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.575-580,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. A HIGH PERFORMANCE OPTICALLY GATED HETEROSTRUCTURE THYRISTOR PASSIVATED WITH LT-GaAs
Zhao, J.H. ; Burke, T. ; Larson, D. ; Weiner, M. ; Chin, A. ; Ballingall, J.M. ; Yu, T.-H.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.217-222,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
4.

Conference Proceedings
Conference Proceedings
4. MAGNETICALLY-RELATED PROPERTIES OF BISMUTH-BASED HIGHT Tc SUPERCONDUCTORS
Vezzoli, G.C. ; Chen, M.F. ; Craver, F. ; Burke, T. ; Moon, B.M. ; Safari, A. ; Lalevic, B. ; Stanley, W.
Pub. info.: High-temperature superconductors : fundamental properties and novel materials processing : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A..  pp.1053-1056,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 169
5.

Conference Proceedings
Conference Proceedings
5. High-Temperature Switching Characteristics of 6H-SiC Thyristor
Xie, K. ; Flemish, J. R. ; Burke, T. ; Buchwald, W. R. ; Zhao, J. H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.93-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
6.

Conference Proceedings
Conference Proceedings
6. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1345-1348,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. A High Voltage (1,750V) and High Current Gain (β=24.8) 4H-SiC Bipolar Junction Transistor using a Thin (12 μm) Drift layer
Zhao, J.H. ; Zhang, J. ; Alexandrov, P. ; Li, X. ; Burke, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1173-1176,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1345-1348,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. A High Voltage (1570V) 4H-SiC Bipolar Darlington with Current Gain β>640 and Tested in a Half-Bridge Inverter up to 20A at VBus=900V
Zhao, J.H. ; Zhang, J. ; Alexandrov, P. ; Burke, T.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1169-1172,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
10.

Conference Proceedings
Conference Proceedings
10. SiC Power Devices for High-Temperature And High-Power Applications
Xie, K. ; Flemish, J.R. ; Burke, T. ; Bushwald, W.R.
Pub. info.: Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV).  pp.193-200,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-15