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14 results

Conference Proceedings

1. TEM STUDIES OF ORDERING IN MOCVD-GROWN (GaIn)P ON GaAs

McKernan, S. ; De Cooman, B. C. ; Carter, C. B. ; Bour, D. P. ; Shealy, J. R.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.637-640, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

2. OMVPE GROWTH OF MATERIALS FOR RED LASER DIODES

Bour, D. P. ; Treat, D. W. ; Bringans, R. D. ; Geels, R. S. ; Welch, D. F.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.45-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

Conference Proceedings

3. Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

Gotz, W. ; McCluskey, M. D. ; Johnson, N. M. ; Bour, D. P. ; Haller, E. E.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.117-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

4. Characterization of OMVPE-Grown AlGaInN Heterostructures

Bour, D. P. ; Chung, H. F. ; Gotz, W. ; Romano, L. ; Krusor, B. S. ; Hofstetter, D. ; Rudaz, S. ; Kuo, C. P. ; Ponce, F. A. ; Johnson, N. M. ; Craford, M. G. ; Bringans, R. D.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.509-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. Double Modulation and Selective Excitation Photoreflectance for Characterizing Highly Luminescent Semiconductor Structures and Samples with Poor Surface Morphology

Amirtharaj, P. M. ; Chandler-Horowitz, D. ; Bour, D. P.

Pub. info.:	Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.. pp.229-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	406

Conference Proceedings

6. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells

Shan, W. ; Ager, J. W., III. ; Walukiewicz, W. ; Haller, E. E. ; McCluskey, M. D. ; Johnson, N. M. ; Bour, D. P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.15.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

7. Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

McCluskey, M. D. ; Romano, L. T. ; Krusor, B. S. ; Hofstetter, D. ; Bour, D. P. ; Kneissl, M. ; Johnson, N. M. ; Suski, T. ; Jun, J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.42.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

Hofstetter, D. ; Thornton, R. L. ; Romano, L. T. ; Bour, D. P. ; Kneissl, M. ; Donaldson, R. M. ; Dunnrowicz, C.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G2.2.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Structural Characterization of Thick GaN Films Grown by Hydride Vapor Phase Epitaxy

Romano, L. T. ; Molnar, R. J. ; Krusor, B. S. ; Anderson, G. A. ; Bour, D. P. ; Maki, P.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.245-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

10.

Conference Proceedings

10. Activation of Acceptors in Mg-Doped, p-Type GaN

Gotz, W. ; Johnson, N. M. ; Walker, J. ; Bour, D. P.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.595-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

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Author: Bour, D. P.