1.

Conference Proceedings
Conference Proceedings
1. A Phenomenological Model for Accurate Determination of Relaxation and Ge Content in Si1-xGex Layers by Raman Line Shift and X-ray Diffractometry
Bhagavannarayana,G. ; Dietrich,B. ; Zaumseil,P. ; Dombrowski,K.F.
Pub. info.: Physics of - Semiconductor Devices -.  Part 1  pp.595-598,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
2.

Conference Proceedings
Conference Proceedings
2. A Comparative Study of Point Defect Aggregates in High Purity Single Crystals of Silicon Grown by the Czochralski and the Float Zone Methods
Ramanan,R.R. ; Bhagavannarayana,G. ; Lal,Krishan
Pub. info.: Semiconductor Devices.  pp.269-273,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733
3.

Conference Proceedings
Conference Proceedings
3. Study of Damaged Top Layers of Silicon Crystals Produced by BF2+ Implantation by High Resolution X-ray Diffraction
Lal,Krishan ; Bhagavannarayana,G. ; Virdi,G.S.
Pub. info.: Semiconductor Devices.  pp.493-495,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2733