1.

Conference Proceedings
Conference Proceedings
1. MULTILAYER GROWTH OF SILICON BY LIQUID PHASE EPITAXY
Bauser,E. ; Strunk, H. P.
Pub. info.: Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.109-114,  1985.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 37
2.

Conference Proceedings
Conference Proceedings
2. Studies of deep level transient spectroscopy of DX centers of GaAlAs:Te under uniaxial stress
Li,M.-F. ; Yu,P.Y. ; Weber,E.R. ; Bauser,E. ; Hansen,W.L. ; Haller,E.E.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.853-858,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
3.

Conference Proceedings
Conference Proceedings
3. Si Acceptors and their Passivation by Hydrogen in p-type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
Ashwin,M.J. ; Addinall,R. ; Fahy,M.R. ; Newman,R.C. ; Silier,I. ; Bauser,E.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.265-270,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
Li,M.F. ; Shan,W. ; Yu,P.Y. ; Hansen,W.L. ; Weber,E.R. ; Bauser,E.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1103-1108,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41