1.

Conference Proceedings
Conference Proceedings
1. ECR Etching of Group-III Nitride Binary and Ternary Films
Shul, R.J. ; Howard, A.J. ; Pearton, S.J. ; Abernathy, C.R. ; Variuli, C.B. ; Barnes, P.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.217-230,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
2.

Conference Proceedings
Conference Proceedings
2. DEFECT LEVELS IN THE NEAR-SURFACE REGION OF 2.0 MeV 16O+ ION IMPLANTED n-GaAs
Tin, C.C. ; Barnes, P.A. ; Bardin, T.T. ; Pronko, J.G.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.979-982,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
3.

Conference Proceedings
Conference Proceedings
3. High Rate ECR Etching of III-V Nitride Materials
Shul, R.J. ; Howard, A.J. ; Kilcoyne, S.P. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C.B. ; Barnes, P.A. ; Bozack, M.J.
Pub. info.: Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII).  pp.209-225,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-6