1.

Conference Proceedings
Conference Proceedings
1. 1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
M. Domeij ; A. Konstantinov ; B. Buono ; M. Bast ; R. Eisele
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.970-973,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
A. Salemi ; H. Elahipanah ; B. Buono ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.974-977,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
R. Ghandi ; B. Buono ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.706-709,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. Current Gain Degradation in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; G. Malm ; C.M. Zetterling
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.702-705,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE
B. Buono ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.841-844,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. Investigation of Current Gain Degradation in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1131-1134,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
R. Ghandi ; H.S. Lee ; M. Domeij ; B. Buono ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.833-836,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
M. Domeij ; B. Buono ; K. Gumaelius ; F. Allerstam
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.611-614,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
9.

Conference Proceedings
Conference Proceedings
9. Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
R. Ghandi ; M. Domeij ; R. Esteve ; B. Buono ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.661-664,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1061-1064,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648