1.

Conference Proceedings
Conference Proceedings
1. GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON
Ammon, W.v. ; Ehlert, A. ; Lambert, U. ; Graef, D. ; Brohl, M. ; Wagner, P.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.136-147,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
2.

Conference Proceedings
Conference Proceedings
2. Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!*
Schmolke, R. ; Blietz, M. ; Schauer, R. ; Zemke, D. ; Oelkrug, H. ; Ammon, W.v. ; Lambert, U. ; Grtlf, D.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.3-18,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
3.

Conference Proceedings
Conference Proceedings
3. The Impact of Crystal Quality by Delineation of COP and the Impact on the Silicon Wafer Surface
Graef, D. ; Suhren, M. ; Lambert, U. ; Schmolke, R. ; Ehiert, A. ; Ammon, W.v. ; Wagner, P.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.117-131,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
4.

Conference Proceedings
Conference Proceedings
4. IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY
Huber, A. ; Kapser, M. ; Grabmeier, J. ; Lambert, U. ; Ammon, W.v. ; Pech, R.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.280-286,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
5.

Conference Proceedings
Conference Proceedings
5. 300 mm Epi PP Wafer: Is There Sufficient Gettering?
Graff, D. ; Lambert, U. ; Schmolke, R. ; Wablich, R. ; Siebert, W. ; Daub, E. ; Ammon, W.v.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.319-330,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
6.

Conference Proceedings
Conference Proceedings
6. Formation and Control of Defects in Nitrogen Doped Silicon Crystals （Invited Paper）
Huber, A. ; Lambert, U. ; Hackl, W. ; Ammon, W.v.
Pub. info.: High purity silicon VIII : proceedings of the international symposium.  pp.77-85,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-05
7.

Conference Proceedings
Conference Proceedings
7. DEFECT BEHAVIOUR OF OXYGEN DOPED FZ CRYSTALS
Ammon, W.v. ; Ehlert, A. ; Hensel, W.
Pub. info.: Proceedings of the Satellite Symposium to ESSDERC 93 Grenoble/France : crystalline defects and contamination: their impact and control in device manufacturing.  pp.36-50,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-15
8.

Conference Proceedings
Conference Proceedings
8. The Dependence of Ring Like Distributed Stacking Faults on the Axial Temperaure Gradient of of Growing Czochralski Silicon Crystals
Domberger, E. ; Ammon, W.v.
Pub. info.: Proceedings of the Symposium on Process control, Diagnostics, and Modeling in Semiconductor Manufacturing.  pp.294-305,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-2