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26 results

Conference Proceedings

1. Development of Ultra High Sensitivity UV Silicon Carbide Detectors

Yan, F. ; Xin, X.B. ; Alexandrov, P. ; Stahle, C.M. ; Guan, B. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1461-1464, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. 1836 V, 4.7 mΩ・cm2 High Power 4H-SiC Bipolar Junction Transistor

Zhang, J.H. ; Wu, J. ; Alexandrov, P. ; Burke, T. ; Sheng, K. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1417-1420, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

Zhao, J.H. ; Alexandrov, P. ; Li, Y.Z. ; Li, L.X. ; Sheng, K. ; Lebron-Velilla, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1191-1194, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. 10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors

Li, Y.Z. ; Alexandrov, P. ; Zhang, J.H. ; Li, L.X. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1187-1190, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Luo, Y. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Wright, B. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1325-1328, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Li, X. ; Fursin, L. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M. ; Burke, T. ; Khalil, G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1345-1348, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Li, X. ; Luo, Y. ; Zhao, J.H. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1333-1336, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. 4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kW

Alexandrov, P. ; Wright, B. ; Pan, M. ; Weiner, M. ; Fursin, L. ; Zhao, J.H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1177-1180, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Zhao, J.H. ; Li, X. ; Tone, K. ; Alexandrov, P. ; Pan, M. ; Weiner, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1223-1226, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Li, X. ; Tone, K. ; Cao, L. H. ; Alexandrov, P. ; Fursin, L. ; Zhao, J. H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1375-1378, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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