1.

Conference Proceedings
Conference Proceedings
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)
Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.144-158,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10
3.

Conference Proceedings
Conference Proceedings
3. Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation
Stesmans, A. ; Afanas'ev, V. ; Clemer, K. ; Chen, F. ; Campbell, S.A.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.403-416,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
4.

Conference Proceedings
Conference Proceedings
4. Properties of High-k and Extremely Thin Silicon Nitride Stacks
Zhang, Z. ; Fedorenko, Y. ; Truong, L. ; Shi, X. ; Afanas'ev, V. ; Stesmans, A. ; Campbell, S.A.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.375-388,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
5.

Conference Proceedings
Conference Proceedings
5. Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen Implantation
Ciobanu, F. ; Pensl, G. ; Afanas'ev, V. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.693-696,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
Ciobanu, F. ; Frank, T. ; Pensl, G. ; Afanas'ev, V. ; Shamuilia, S. ; Schoner, A. ; Kimoto, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.991-994,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529