1.

Conference Proceedings
Conference Proceedings
1. Si Acceptors and their Passivation by Hydrogen in p-type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
Ashwin,M.J. ; Addinall,R. ; Fahy,M.R. ; Newman,R.C. ; Silier,I. ; Bauser,E.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.265-270,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers
Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.229-234,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb
Addinall,R. ; Newman,R.C. ; Ferguson,I.T. ; Mohades-Kassai,A. ; Brozel,M.R. ; Sharma,V.K.M. ; McPhail,D. ; Sangster,M.J.L.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.1027-1032,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87