1.

Conference Proceedings
Conference Proceedings
1. Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
A. Chanthaphan ; Y. Fukushima ; K. Yamamoto ; M. Aketa ; H. Asahara
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.445-448,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface
T. Hosoi ; T. Kirino ; A. Chanthaphan ; Y. Uenishi ; D. Ikeguchi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.721-724,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates
H. Watanabe ; T. Hosoi ; T. Kirino ; Y. Uenishi ; A. Chanthaphan
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.697-702,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures
A. Chanthaphan ; Y.H. Cheng ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.627-630,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. Degradation of SiO2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen Annealing
A. Chanthaphan ; T. Hosoi ; Y. Nakano ; T. Nakamura ; T. Shimura
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.541-544,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium
A. Chanthaphan ; Y. Katsu ; T. Hosoi ; T. Shimura ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.340-343,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897