Blank Cover Image

3C-SiC buffer layers converted from Si at a low temperature

著者名:
Liaw, H. M.
Hong, S. Q.
Fejes, P.
Werho, D.
Tompkins, H.
Zollner, S.
Wilson, S. R.
Linthicum, K. J.
Davis, R. F.
さらに 4 件
掲載資料名:
Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
572
発行年:
1999
開始ページ:
219
出版情報:
Warrendale, PA: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558994799 [1558994793]
言語:
英語
請求記号:
M23500/572
資料種別:
国際会議録

類似資料:

1 国際会議録 Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers

Hong, S. Q., Liaw, H. M., Linthicum, K., Davis, R. F., Fejes, P., Zollner, S., Kottke, M., Wilson, S. R.

MRS-Materials Research Society
7 国際会議録 Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F.

MRS-Materials Research Society
2 国際会議録 Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

Edwards, N.V., Vella, J., Xie, Q., Zollner, S., Werho, D., Adhihetty, I., Liu, R., Tiwald, T.E., Russell, C., Vires, J., …

Materials Research Society
8 国際会議録 Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates

Davis, R. F., Nam, O-H., Zheleva, T. S., Bremser, M. D., Linthicum, K. J., Gehrke, T., Rajagopal, P., Thomson, D. B., …

MRS - Materials Research Society
3 国際会議録 Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process

Danielsson, E., Zetterling, C. -M., Ostling, M., Lee, S. K., Linthicum, K., Thomson, D. B., Nam, O. -H., Davis, R. F.

Trans Tech Publications
9 国際会議録 Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films

Davis, R. F., Nam, O. -H., Zheleva, T. S., Gehrke, T., Linthicum, K. J., Rajagopal, P.

Trans Tech Publications
4 国際会議録 SiC MISFETs With MBE-grown AIN Gate Dielectric

Zetterling, C. -M., Ostling, M., Yano, H., Kimoto, T., Matsunami, H., Linthicum, K., Davis, R. F.

Trans Tech Publications
10 国際会議録 Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

Linthicum, K. J., Gehrke, T., Thomson, D. B., Tracy, K. M., Carlson, E. P., Smith, T. P., Zheleva, T. S., Zorman, C. A., …

MRS - Materials Research Society
5 国際会議録 *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Zheleva, T. S., Rajagopal, P., Zorman, C. A., Mehregany, M.

MRS-Materials Research Society
11 国際会議録 Advanced PENDEOEPITAXY(TM) of GaN and AlxGa1-xN thin films on SiC(0001) and Si(111) substrates via metalorganic chemical vapor deposition

Gehrke, T., Linthicum, K. J., Rajagopal, P., Preble, E. A., Davis, R. F.

MRS-Materials Research Society
6 国際会議録 Characterization of Be-Implanted GaN Annealed at High Temperatures

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., Davis, R. F.

MRS - Materials Research Society
12 国際会議録 Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., Davis, R. F.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12