Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm

Characterization of gate electrode etch process for 0.25 ｦﾌm extended to 0.18 ｦﾌm

Author(s):

Gerung,H. ( Chartered Semiconductor Manufacturing Ltd. )
Chhagan,V.K.
Yelehanka,P.R.
Zhou,M.S.
Hui,J.K.L.

Publication title:

Process and equipment control in microelectronic manufacturing : 19-20 May 1999, Edinburgh, Scotland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3742

Pub. Year:

1999

Page(from):

96

Page(to):

104

Pub. info.:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819432223 [0819432229]

Language:

English

Call no.:

P63600/3742

Type:

Conference Proceedings

Details

TDL ID:	ZA00018547
Series ID:	PA00000029
Conf. info. (Name):	Microelectronic Manufacturing Technologies : Process and Wquipment Control in Microelectronic Manufacturin
Conf. info. (Number):	1999
Conf. info. (Venue):	Edinburgh, Scotland
Conf. info. (Date):	1999.05.19-1999.05.20

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