Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment | 東京工業大学附属図書館資料名データベース

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

責任表示:: drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
シリーズ名:: ECS transactions
シリーズ巻号:: 6(1)
出版情報:: Pennington, NJ: Electrochemical Society, 2007
ISSN:: 19385862
ISBN:: 9781566775502 [1566775507]
請求記号:: E23400/6-1
資料種別:: 国際会議録

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詳細

TDL書誌ID:	ZA00047125
シリーズＩＤ:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	3rd ; 211th
会議開催地:	Chicago, IL, USA
会議開催年:	2007.05.06-2007.05.10

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