Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment | 東京工業大学附属図書館資料名データベース

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

責任表示:: drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
シリーズ名:: ECS transactions
シリーズ巻号:: 3(2)
出版情報:: Pennington, NJ: Electrochemical Society, 2006
ISSN:: 19385862
ISBN:: 9781566775021 [1566775027]
請求記号:: E23400/3-2
資料種別:: 国際会議録

巻号一覧

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詳細

TDL書誌ID:	ZA00047110
シリーズＩＤ:	PA00000034
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.02

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