Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium | 東京工業大学附属図書館資料名データベース

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium

責任表示:: drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium
シリーズ名:: Electrochemical Society Proceedings Series
シリーズ巻号:: 2005-05
出版情報:: Pennington, NJ: Electrochemical Society, 2005
ISSN:: 01616374
ISBN:: 9781566774635 [1566774632]
請求記号:: E23400/200505
資料種別:: 国際会議録

巻号一覧

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詳細

TDL書誌ID:	ZA00015388
シリーズＩＤ:	PA00000028
会議名:	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
回次:	2005 ; 207th
会議開催地:	Quebec City, QC, Canada
会議開催年:	2005.05.16-2005.05.18

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