Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment | 東京工業大学附属図書館資料名データベース

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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

責任表示:: drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
シリーズ名:: ECS transactions
シリーズ巻号:: 13(1)
出版情報:: Pennington, N.J.: Electrochemical Society, 2008
ISSN:: 19385862
ISBN:: 9781566776264 [1566776260]
請求記号:: E23400/13-1
資料種別:: 国際会議録

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詳細

TDL書誌ID:	ZA00001466
シリーズＩＤ:	PA00000034
会議名:	ECS Meeting
回次:	213th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2008.05.18-2008.05.23

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