1.

国際会議録
国際会議録
1. Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation
H. Saitoh ; A. Seki ; A. Manabe ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.659-662,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum
T. Frank ; S. Beljakowa ; G. Pensl ; T. Kimoto ; V. Afanas'ev
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.555-560,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC
G. Alfieri ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.591-594,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
T. Hori ; K. Danno ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.129-132,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Growth and Electrical Characterization of 4H-SiC Epilayers
T. Kimoto ; K. Danno ; T. Hori ; H. Matsunami
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.35-40,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
6.

国際会議録
国際会議録
6. Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
K. Kawahara ; G. Alfieri ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.365-368,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes
G. Alfieri ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.389-392,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
8.

国際会議録
国際会議録
8. Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction
H. Miyake ; T. Kimoto ; J. Suda
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.979-982,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
9.

国際会議録
国際会議録
9. Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures
M. Noborio ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.679-682,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
10.

国際会議録
国際会議録
10. High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface
T. Masuda ; S. Harada ; T. Tsuno ; Y. Namikawa ; T. Kimoto
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.695-698,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
11.

国際会議録
国際会議録
11. Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes
T. Hiyoshi ; T. Hori ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.995-998,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
12.

国際会議録
国際会議録
12. Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
G. Alfieri ; T. Kimoto
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.421-424,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
13.

国際会議録
国際会議録
13. Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
S.A. Reshanov ; G. Pensl ; K. Danno ; T. Kimoto ; S. Hishiki
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.417-420,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
14.

国際会議録
国際会議録
14. Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor
K. Amari ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.1039-1042,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
15.

国際会議録
国際会議録
15. Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
M. Noborio ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.815-818,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
16.

国際会議録
国際会議録
16. Deep Levels in Electron-Irradiated n- and p-type 4H-SiC Investigated by Deep Level Transient Spectroscopy
K. Danno ; T. Kimoto
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.331-334,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
17.

国際会議録
国際会議録
17. High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
M. Noborio ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.789-792,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
18.

国際会議録
国際会議録
18. 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
M. Noborio ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.757-760,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
19.

国際会議録
国際会議録
19. Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
Y. Nanen ; H. Yoshioka ; M. Noborio ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.753-756,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
20.

国際会議録
国際会議録
20. Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping
G. Feng ; J. Suda ; T. Kimoto
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.245-250,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
21.

国際会議録
国際会議録
21. Mesophase semiconductors and the field effect transistors
Y. Shimizu ; K. Oikawa ; K. Nakayama ; H. Monobe ; T. Kimoto ; K. Tsuchiya ; B. Heinrich ; D. Guillon ; M. Yokoyama
出版情報: Liquid crystals XI : 26-28 August 2007, San Diego, California, USA.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6654
22.

国際会議録
国際会議録
22. Widely tunable lasers based on mode-hop-free semiconductor laser array
T. Kurobe ; T. Kimoto ; K. Muranushi ; T. Mukaihara ; M. Ariga
出版情報: Optoelectronic materials and devices II.  1  pp.67821C-1-67821C-10,  2007.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 6782