Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon
- 著者名:
Liaw, H. M. Venugopal, R. Wan, J. Doyle, R. Fejes, P. Loboda, M. J. Melloch, M. R. - 掲載資料名:
- Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 338-342(2)
- 発行年:
- 2000
- 開始ページ:
- 1463
- 終了ページ:
- 1466
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498543 [0878498540]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
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Trans Tech Publications |
MRS-Materials Research Society |
MRS - Materials Research Society |
10
国際会議録
Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
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