1.

国際会議録
国際会議録
1. 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC
Irvine, K. G. ; Singh, R. ; Paisley, M. J. ; Palmour, J. W. ; Kordina, O. ; Carter, C. H., Jr.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.119-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
2.

国際会議録
国際会議録
2. Characterization of thick 4H-SiC hot-wall CVD layers
Paisley, M. J. ; Irvine, K. G. ; Kordina, O. ; Singh, R. ; Palmour, J. W. ; Carter, C. H. Jr.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.167-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
3.

国際会議録
国際会議録
3. 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development
Agarwal, A. ; Ryu, S. -H. ; Singh, R. ; Kordina, O. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1387-1390,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)