1.

国際会議録
国際会議録
1. 36 Nb and NbN Metal Gates for Gate Stacks with High-k Dielectrics
Schmidt, M. ; Ludsteck, A. ; Wiest, F. ; Schuhe, J. ; Eisele, I.
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.311-318,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05
2.

国際会議録
国際会議録
2. (10.4) 2:35 -2:55 PM - SiGe-based Combined MBE and CVD Processing for Vertical "Silicon-on-Nothing" (SON) Device Technology
Schulze, J. ; Eisele, I. ; Thompson, P.E. ; Jernigan, G. ; Bassim, N. ; Suligoj, T. (University of the German Federal Armed Forces Munich, US Naval Research Laboratory, University of Zagreb)
出版情報: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.719-730,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-07
3.

国際会議録
国際会議録
3. Nitrogen Profile and Electrical Properties of Reoxidized Thermally Grown Silicon Nitride
Ludsteck, A, ; Schulze, J. ; Eisele, I. ; Dietl, W. ; Chung, H. ; Nenyei, Z. ; Bergmaier, A. ; Dollinger, G.
出版情報: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.232-241,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-01
4.

テクニカルペーパー
テクニカルペーパー
4. Controlled Manipulation of Small- and Large- Scales in a Turbulent Shear Layer, Part II: Stability Studies
Rusak, Z. ; Eisele, I.
出版情報: AIAA meeting papers on disc.  2005.  [Reston, Va.].  American Institute of Aeronautics and Astronautics
シリーズ名: AIAA Paper : AIAA Fluid Dynamics Conference
シリーズ巻号: 35th