1.

国際会議録
国際会議録
1. Low-frequency noise in 4H-SiC BJTs
Rumyantsev, S. L. ; Levinshtein, M. E. ; Agarwal, A. K. ; Palmour, J. W.
出版情報: Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain.  pp.251-254,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5470
2.

国際会議録
国際会議録
2. CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF DEFECTS IN BETA SILICON CARBIDE THIN FILMS
Carter Jr., C. H. ; Edmond, J. A. ; Palmour, J. W. ; Ryu, J. ; Kim, H. J. ; Davis, R. F.
出版情報: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.593-598,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 46
3.

国際会議録
国際会議録
3. Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
Ivanov, P. A. ; Levinshtein, M. E. ; Mnatsakanov, T. T. ; Palmour, J. W. ; Singh, R. ; Irvin, K. G. ; Das, M.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.973-976,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. SiC Devices with ONO Stacked Dielectrics
Lipkin, L. A. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1093-1096,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
5.

国際会議録
国際会議録
5. Turn-On Process in High-Voltage 4H-SiC Thyristors
Dyakonova, N. V. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.211-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
6.

国際会議録
国際会議録
6. 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC
Irvine, K. G. ; Singh, R. ; Paisley, M. J. ; Palmour, J. W. ; Kordina, O. ; Carter, C. H., Jr.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.119-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
7.

国際会議録
国際会議録
7. Characterization of thick 4H-SiC hot-wall CVD layers
Paisley, M. J. ; Irvine, K. G. ; Kordina, O. ; Singh, R. ; Palmour, J. W. ; Carter, C. H. Jr.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.167-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572
8.

国際会議録
国際会議録
8. High Temperature, High Current, 4H-SiC Accu-DMOSFET
Singh, R. ; Ryu, S. -H. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1271-1274,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
9.

国際会議録
国際会議録
9. 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs
Suvorov, A. V. ; Lipkin, L. A. ; Johnson, G. M. ; Singh, R. ; Palmour, J. W.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1275-1278,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
10.

国際会議録
国際会議録
10. Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities
Dyakonova, N. V. ; Ivanov, P. A. ; Kozlov, V. A. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1319-1322,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)