Effects of Re-Oxidation on the Electrical Properties of Wet Oxide Grown on C-Face of 4H-SiC

Effects of Re-Oxidation on the Electrical Properties of Wet Oxide Grown on C-Face of 4H-SiC

著者名:

掲載資料名:

The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2000-2

発行年:

2000

開始ページ:

523

終了ページ:

528

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772679 [1566772672]

言語:

英語

請求記号:

E23400/2000-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013971
シリーズID:	PA00000028
会議名:	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
回次:	4th
会議開催地:	Tronto, Canada
会議開催年:	2000.05.15-2000.05.18

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