1.

国際会議録
国際会議録
1. *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates
Davis, R. F. ; Gehrke, T. ; Linthicum, K. J. ; Zheleva, T. S. ; Rajagopal, P. ; Zorman, C. A. ; Mehregany, M.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.1.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
2.

国際会議録
国際会議録
2. Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. B. ; Tracy, K. M. ; Carlson, E. P. ; Smith, T. P. ; Zheleva, T. S. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.9.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
3.

国際会議録
国際会議録
3. Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition
Linthicum, K. J. ; Gehrke, T. ; Thomson, D. ; Ronning, C. ; Carlson, E. P. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.
出版情報: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.307-,  1999.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 572