Characterization of SiC MESFETs on Conducting Substrates

Characterization of SiC MESFETs on Conducting Substrates

著者名:

Nilsson, P. A.

掲載資料名:

Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999

シリーズ名:

Materials science forum

シリーズ巻号:

338-342(2)

発行年:

2000

開始ページ:

1255

終了ページ:

1258

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498543 [0878498540]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014227
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials : ICSCRM
回次:	1999
会議開催地:	Research Triangle Park, North Carolina, USA
会議開催年:	1999.10.10-1999.10.15

類似資料:

1 国際会議録 Characterization of p-type buffer layers for SiC microwave device applications Konstantinov, A. O., Karlsson, S., Nilsson, P-A., Saroukhan, A-M., Svedberg, J-O., Nordell, N., Harris, C. I., Eriksson, … MRS-Materials Research Society	7 国際会議録 Short-Channel Effect Suppression in Silicon Carbide Power MESFETs Konstantinov, A., Saroukhan, A.-M., Karlsson, S., Harris, C., Litwin, A. Materials Research Society
2 国際会議録 Fabrication, Characterization, and Modeling of SiC MESFETs Rorsman, N., Eriksson, J., Zirath, H. Trans Tech Publications	8 国際会議録 Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, Rolf, Eriksson, Joakim, Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications
3 国際会議録 Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications Rorsman, N., Nilsson, P.A., Eriksson, J., Andersson, K., Zirath, H. Trans Tech Publications	9 国際会議録 Performance of Silicon Carbide Microwave MESFETs Using a Thin p-Doped Buffer Layer Eriksson, J., Rorsman, N., Zirath, H. Trans Tech Publications
4 国際会議録 High Frequency Measurements and Simulations of SiC MESFETs up to 250°C Liu, W., Zetterling, C.M., Oestling, M., Eriksson, J., Rorsman, N., Zirath, H. Trans Tech Publications	10 国際会議録 A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers Eriksson, J., Rorsman, N., Zirath, H., Jonsson, R., Wahab, Q.u., Rudner, S. Trans Tech Publications
5 国際会議録 Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations Jonsson, R., Eriksson, J., Wahab, Q., Rudner, S., Rorsman, N., Zirath, H., Svensson, C. Trans Tech Publications	11 国際会議録 Design and Characterization of a SiC Scbottky Diode Mixer Eriksson, J., Ferdos, F., Zirath, H., Rorsman, N. Trans Tech Publications
6 国際会議録 SiC MESFET with a Double Gate Recess Nilsson, P.A., Rorsman, N., Sudow, M., Andersson, K., Hjelmgren, H., Zirath, H. Trans Tech Publications	12 国際会議録 A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates Eriksson, J., Rorsman, N., Zirath, H., Henry, A., Magnusson, B., Ellison, A., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12