1.

国際会議録
国際会議録
1. A Quantitative Correlation Between Inversion-Layer Mobility and Si/SiO2 Interface Roughness
Fang, S.J. ; Lin, H.C. ; Snyder, J.P. ; Helms, C.R. ; Yamanaka, T.
出版情報: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.329-337,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-1
2.

国際会議録
国際会議録
2. Effect of Thermal Oxidation on Si/SiO2 Interface Microroughness An Atomic Force Microscopy (AFM) Study
Fang, S.J. ; Chen, W. ; Helms, C.R. ; Yamanaka, T.
出版情報: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.338-349,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-1